On anomalous channelling effects in ion-implanted silicon
- 1 May 1987
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 55 (5) , 235-238
- https://doi.org/10.1080/09500838708203756
Abstract
In this work results of a Monte Carlo simulation of the ion penetration in a crystalline silicon target are reported. It is shown that, contrary to the common expectation, channelling is sustained by a non-vanishing divergency of the ion beam for a nominally random orientation of the target.Keywords
This publication has 10 references indexed in Scilit:
- Computer studies of the reflection of light ions from solidsPublished by Elsevier ,2002
- Channeling in GaAs. A Monte Carlo Simulation of low Energy ImplantsPhysica Status Solidi (a), 1986
- Channeling of B and As near the silicon 〈001〉 axisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Ion damage calculations in crystalline siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Calculation of channeling effects during ion implantation using the Boltzmann transport equationIEEE Transactions on Electron Devices, 1985
- Channeling phenomena in off-axis ion implanted (001) siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Channeling of ions near the silicon 〈001〉 axisApplied Physics Letters, 1985
- Channeling in low energy boron ion implantationApplied Physics Letters, 1984
- Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron DeviceIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1984
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974