TEM Investigation of Dislocation Loops in Undoped InGaAsP and InGaP Layers Grown by Liquid Phase Epitaxy
- 1 June 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (6A) , L394-396
- https://doi.org/10.1143/jjap.23.l394
Abstract
Undoped InGaAsP and InGaP layers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by transmission electron microscopy. Two types of dislocation loops are observed in the same crystals as follows: interstitial type Frank loops with Burgers vectors of a/3 and vacancy type prismatic loops with Burgers vectors of a/2. Most are generated in the region near the interface between the epitaxial layer and the substrate.Keywords
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