Plasma Processes in Activated Thin Film Deposition

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Abstract
This paper deals with plasma aspects in physical and chemical vapour deposition processes. A systematic representation of deposition methods is given and possibilities of plasma diagnostic are summerized. Characteristic parameters of electron kinetics (mean free paths, collision frequencies, energy distribution functions) and rate equations for calculation of particle densities are discussed for a plasma in plasma activated physical vapour deposition device. Theoretical results are compared with measurements (Te, Ne, Ez) in the plasma of a TiNx‐deposition device with hollow cathode arc evaporator. Mechanism of plasma polymerisation is discussed. Results of experimental investigations of the plasma in an Ar‐hexamethyldisiloxane D.C. low pressure glow discharge are presented and compared with results of modelling of this plasma taking into account direct‐, stepwise‐ and Penning‐ionization. The necessivity of knowledge of reactive cross sections for understanding of plasma assisted thin film formation processes is accentuated.

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