Ion impact induced desorption study of the surface of plasma-deposited nanocrystalline silicon
- 1 October 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 189-190, 967-971
- https://doi.org/10.1016/s0039-6028(87)80535-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Dominant reaction channels and the mechanism of silane decomposition in a H2-Si(s)-SiH4 glow dischargePlasma Chemistry and Plasma Processing, 1987
- Properties of microcrystalline silicon. IV. Electrical conductivity, electron spin resonance and the effect of gas adsorptionJournal of Physics C: Solid State Physics, 1983
- Investigation of the initial stages of oxidation of microcrystalline silicon by means of X-ray photoelectron spectroscopySolid State Communications, 1983
- Chemical relaxation study of the heterogeneous silicon-hydrogen system under plasma conditionsPlasma Chemistry and Plasma Processing, 1983
- Optical absorption in hydrogenated microcrystalline siliconJournal of Physics C: Solid State Physics, 1983
- Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline siliconPhilosophical Magazine Part B, 1982
- Raman scattering from hydrogenated microcrystalline and amorphous siliconJournal of Physics C: Solid State Physics, 1982
- Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees CJournal of Physics C: Solid State Physics, 1981
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968