The specific contact resistance of Ohmic contacts to HgTe/Hg1−xCdxTe heterostructures
- 15 July 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (2) , 907-909
- https://doi.org/10.1063/1.346733
Abstract
The specific contact resistance (ρc) of Ohmic contacts to HgTe/Hg0.4Cd0.6Te heterostructures has been measured using a transmission line model. The lowest measured values of ρc (1.7×10−3 Ω cm2) corresponded to the In/HgTe/Hg 0.4Cd0.6Te and Sn/HgTe/Hg0.4Cd0.6Te systems; while within the range of the other metal contacts examined (Ag, Al, Au, Cr, Cu, Ni, Pt, and Ti), ρc was independent of HgTe/Hg0.4Cd0.6Te interface reactivity. Comparative measurements have also been made with metal junctions formed to Hg0.4Cd0.6Te and HgTe.This publication has 12 references indexed in Scilit:
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