Effect of Annealing in Air on Electrical Resistances of B-Doped Polycrystalline Diamond Films

Publisher Website
Google Scholar
Abstract
The temperature dependent electrical behavior of as-deposited B-doped polycrystalline diamond films was investigated. Diamond films with various atomic B concentrations were deposited using a microwave plasma chemical vapor deposition technique. The atomic B concentrations were determined using secondary ion mass spectroscopy. Resistances were measured between 25 and 525° C in air. Similar electrical behavior was observed for films with atomic B concentrations less than 3×1017 cm-3 in which the resistance increased over 6 orders of magnitude after heating to 525° C. The variation in resistance between the heating and cooling cycles decreased with increasing B concentration. Little or no variation in the resistance was observed for films with atomic B concentrations higher than 4×1018 cm-3. The variable temperature dependent behavior can be explained by a surface conduction mechanism.