Cryogenically cooled performance of a monolithic 44-GHz InP-based HEMT low-noise amplifier
- 1 September 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 5 (9) , 281-283
- https://doi.org/10.1109/75.410397
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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- Characteristics of 0.8- and 0.2- mu m gate length In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As/InP (0.53>or=x>or=0.70) modulation-doped field-effect transistors at cryogenic temperaturesIEEE Transactions on Electron Devices, 1992