Electrical properties of heteroepitaxial grown tin-doped indium oxide films

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Abstract
Oriented thin‐film tin‐doped indium oxide (ITO) was heteroepitaxially grown on optically polished (100) or (111) planes of single‐crystalline yttria‐stabilized zirconia (YSZ) substrates using e‐beam evaporation or dc magnetron sputtering techniques. Pole figure x‐ray diffraction analyses revealed that the heteroepitaxial relations were (001)ITO∥(001)YSZ, [100]ITO∥[100]YSZ, and (111)ITO∥(111)YSZ, [110]ITO∥[110]YSZ, respectively. X‐ray rocking curve analyses and Rutherford backscattering spectrometry revealed that the e‐beam evaporated heteroepitaxial ITO films had much higher crystallinity than the one deposited by dc magnetron sputtering. Both carrier density and Hall mobility of the e‐beam evaporated heteroepitaxial films showed steady increases in a wide temperature range, which could be interpreted in terms of the increasing Sn‐doping efficiency caused by the improvement of the crystallinity of In2O3 host lattice, and hence the decreasing Sn‐based neutral scattering centers.