Simplified treatment of transient doping behaviour in CVD (II)
- 1 April 1987
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (4) , 481-485
- https://doi.org/10.1002/crat.2170220406
Abstract
No abstract availableKeywords
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- A Model for Dopant Incorporation into Growing Silicon Epitaxial Films: I . TheoryJournal of the Electrochemical Society, 1979
- Transient and Steady‐State Response of the Dopant System of a Silicon Epitaxial Reactor: Transfer‐Function ApproachJournal of the Electrochemical Society, 1978