Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs

This publication has 16 references indexed in Scilit:

• W-band InP wideband MMIC LNA with 30 K noise temperature
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Nearly noise-free transistor operated in the 2–18 GHz range
  Applied Physics Letters, 1998
• Very high-frequency small-signal equivalent circuit for short gate-length InP HEMTs
  IEEE Transactions on Microwave Theory and Techniques, 1997
• Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET
  IEEE Transactions on Microwave Theory and Techniques, 1997
• Influence of kink effect on noise measurements in InP substrate PHEMTs at microwave frequencies
  Solid-State Electronics, 1996
• Impact ionisation in high-output-conductance region of 0.5 μm AlSb/InAs HEMTs
  Electronics Letters, 1993
• A new and reliable direct parasitic extraction method for MESFETs and HEMTs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1993
• A linear dependence of F/sub min/ on frequency for TET's
  IEEE Transactions on Microwave Theory and Techniques, 1993
• A new criterion for linear 2-port stability using a single geometrically derived parameter
  IEEE Transactions on Microwave Theory and Techniques, 1992
• Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
  IEEE Transactions on Microwave Theory and Techniques, 1989