nuclear magnetic resonance of amorphous hydrogenated silicon and amorphous microcrystalline mixed-phase hydrogenated silicon
- 1 April 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (10) , 4581-4590
- https://doi.org/10.1103/physrevb.35.4581
Abstract
nuclear magnetic resonance (NMR) spectra have been measured for amorphous hydrogenated silicon (a-Si:H) and amorphous microcrystalline mixed-phase hydrogenated silicon (μc-Si:H) using high-resolution solid-state NMR techniques; magic-angle sample spinning, dipolar decoupling, and cross polarization (CP). NMR spectra have been also measured. The peak position of the signal observed with the CP technique correlates well with the line shape of NMR spectra, which has been ascribed to a chemical shift due to bonding configurations not only in the first coordination sphere but also in the second- and further-nearest coordination spheres. Origins of the linewidth have also been discussed, the magnitude of each contribution being estimated. A narrow signal can be obtained without the CP technique only in μc-Si:H, which demonstrates that there are regions where the silicon network is mobile. Based on the NMR results, microscopic models of the structures of a-Si:H and μc-Si:H are presented.
Keywords
This publication has 26 references indexed in Scilit:
- Proton nuclear magnetic resonance study on hydrogen incorporation in amorphous-microcrystalline mixed-phase hydrogenated siliconJournal of Applied Physics, 1984
- Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasmaJournal of Non-Crystalline Solids, 1983
- Local bonding configuration of phosphorus in doped and compensated amorphous hydrogenated siliconPhysical Review B, 1983
- Hydrogen Incorporation Scheme in Amorphous-Microcrystalline Mixed-Phase Si: H FilmsJapanese Journal of Applied Physics, 1983
- NMR in-SiPhysical Review B, 1982
- The coordination of boron in aSi: (B,H)Solid State Communications, 1982
- Proton-magnetic-resonance studies of microstructure in plasma-deposited amorphous-silicon—hydrogen filmsPhysical Review B, 1981
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968