Defect reduction in GaAs and InP grown on planar Si(111) and on patterned Si(001) substrates
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 314-320
- https://doi.org/10.1016/0022-0248(94)91069-3
Abstract
No abstract availableKeywords
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