Influence of germanium content on the degradation of strained Si1−xGex epitaxial diodes by electron irradiation
- 16 May 1994
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 143 (1) , 183-193
- https://doi.org/10.1002/pssa.2211430123
Abstract
No abstract availableKeywords
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