Minority-carrier lifetime of magnetic field applied Czochralski silicon wafers
- 7 November 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (19) , 1850-1852
- https://doi.org/10.1063/1.100374
Abstract
The dependence of minority-carrier lifetimes and diffusion length on starting silicon materials grown by the magnetic field applied Czochralski (MCZ), conventional Czochralski(CZ), and float-zone (FZ) methods has been investigated with a capacitance-time relaxation technique. MCZ silicon yields longer minority-carrier lifetimes and diffusion length than those of both CZ and FZ silicon materials. The generation lifetime of MCZ silicon increases, while the recombination lifetime decreases, with the initial oxygen concentration. These characteristics are correlated with grown-in defects and gettering by oxygen-related defects.Keywords
This publication has 12 references indexed in Scilit:
- Evaluation of Intrinsic Gettering of Gold by Oxide Precipitation in Czochralski SiliconJournal of the Electrochemical Society, 1988
- Recombination lifetime in oxygen-precipitated siliconIEEE Electron Device Letters, 1986
- Striations in CZ silicon crystals grown under various axial magnetic field strengthsJournal of Applied Physics, 1985
- Recombination lifetime using the pulsed MOS capacitorIEEE Transactions on Electron Devices, 1984
- Precipitation and redistribution of oxygen in Czochralski-grown siliconApplied Physics Letters, 1980
- Melting of silicon crystals and a possible origin of swirl defectsJournal of Crystal Growth, 1977
- Intrinsic gettering by oxide precipitate induced dislocations in Czochralski SiApplied Physics Letters, 1977
- The Identification, Annihilation, and Suppression of Nucleation Sites Responsible for Silicon Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1976
- The carrier lifetime of heat-treated silicon crystalsJournal of Electronic Materials, 1975
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967