108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees and matched resistors
- 1 November 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (11) , 1310-1312
- https://doi.org/10.1109/68.250053
Abstract
Connections to bulk bias tees and various mismatched loads degrade the usable frequency response of high-speed photodetectors. Monolithic integration of passive components to enhance the realizable performance of high-bandwidth, long-wavelength photodiodes is demonstrated. Circuits having bias tees and matched resistors integrated with 7- mu m*7- mu m photodiodes show usable electrical bandwidths exceeding 100 GHz.<>Keywords
This publication has 6 references indexed in Scilit:
- 100 GHz Double Heterostructure GaInAs/InP p-i-n PhotodiodePublished by Optica Publishing Group ,1993
- Specific contact resistivity of InGaAs/InP p -isotype heterojunctionsElectronics Letters, 1992
- Ultrafast graded double-heterostructure GaInAs/InP photodiodeApplied Physics Letters, 1991
- Picosecond optical sampling of GaAs integrated circuitsIEEE Journal of Quantum Electronics, 1988
- Ultrawide-band long-wavelength p-i-n photodetectorsJournal of Lightwave Technology, 1987
- Measurement of absorption coefficients of Ga 0.47 In 0.53 As over the wavelength range 1.0–1.7 μmElectronics Letters, 1985