Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe
- 28 August 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (9) , 1396-1398
- https://doi.org/10.1063/1.1289914
Abstract
THz radiation is detected by a low-temperature-grown GaAs (LT-GaAs) photoconductive antenna probed with a 1.55 μm probe laser. The detection efficiency is found to be approximately 10% of that obtained with a 780 nm probe. From the nonquadratic dependence of photoconductivity on laser intensity, two-step photoabsorption mediated by midgap states in LT-GaAs is suggested, instead of the two-photon absorption, as the primary process for the photoconductivity.Keywords
This publication has 8 references indexed in Scilit:
- LT-GaAs detector with 451 fs response at 1.55 µmvia two-photon absorptionElectronics Letters, 1999
- Ultrafast Photoconductive Detectors Based on Semi-Insulating GaAs and InPJapanese Journal of Applied Physics, 1997
- High-carrier-density electron dynamics in low-temperature-grown GaAsApplied Physics Letters, 1997
- Ultrashort lifetime photocarriers in Ge thin filmsApplied Physics Letters, 1996
- 0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperaturesPhysical Review B, 1994
- Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniquesJournal of Applied Physics, 1992
- Photoemission spectroscopy of GaAs:As photodiodesApplied Physics Letters, 1992
- Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperaturesIEEE Journal of Quantum Electronics, 1992