C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
- 15 December 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 195 (1-4) , 98-104
- https://doi.org/10.1016/s0022-0248(98)00694-0
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Auto-doping of Carbon to AlAs Grown by Metalorganic Chemical Vapor Deposition using Trimethylaluminum and TertiarybutylarsineJapanese Journal of Applied Physics, 1997
- Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity FilmsJournal of Electronic Materials, 1997
- Properties of (Ga0.47In0.53)As epitaxial layers grown by metalorganic vapor phase epitaxy (MOVPE) using alternative arsenic precursorsJournal of Crystal Growth, 1997
- Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor depositionJournal of Crystal Growth, 1994
- Heavy carbon doping of GaAs grown by solid-source molecular-beam epitaxyApplied Physics Letters, 1992
- Quantitative oxygen measurements in OMVPE Al x Ga1−x As grown by methyl precursorsJournal of Electronic Materials, 1992
- Properties of high-purity AlxGa1−xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursorsJournal of Applied Physics, 1987
- Arsen‐organo‐Verbindungen. V. Zur Darstellung der Lithiumderivate des Mono‐ und Di‐tert.butylarsinsZeitschrift für anorganische und allgemeine Chemie, 1965