ARUPS study of an impurity-induced stabilization of SiO2 on Si(100)
- 10 January 1990
- Vol. 41 (4-6) , 793-795
- https://doi.org/10.1016/0042-207x(90)93786-i
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Investigation of the SiO2/Si interface. II. Oxidation of an HF-cleaned Si(100) surface using photoemission spectroscopy with synchrotron radiationJournal of Applied Physics, 1989
- On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structuresSurface Science, 1989
- Study of the interfacial structure between Si (100) and thermally grown SiO2 using a ball-and-spoke modelJournal of Applied Physics, 1987
- Si→transformation: Interfacial structure and mechanismPhysical Review Letters, 1987
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Dipole-Induced Changes of the Band Discontinuities at the Si-Si InterfacePhysical Review Letters, 1986
- Amorphous semiconductor heterojunctions: Technological impactSurface Science, 1986
- Heterojunction band discontinuity control by ultrathin intralayersApplied Physics Letters, 1985
- The Si–SiO2 interface: Correlation of atomic structure and electrical propertiesJournal of Vacuum Science & Technology A, 1984
- Atomic structure at the (111) Si-SiO2 interfaceJournal of Applied Physics, 1982