Classical description of laser-induced desorption rates
- 15 May 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (15) , 8131-8143
- https://doi.org/10.1103/physrevb.35.8131
Abstract
We investigate the effect of a laser on the rate of desorption of an atom from a surface using a classical model. The laser gives rise to an oscillating local electric field which couples to the effective dipole moment created by the interaction between the adatom and the surface. Using analytical procedures, we obtain a single-particle Langevin equation to describe the system. The Langevin equation gives rise to a Fokker-Planck equation governing the probability distribution of the adatom’s velocity and position. In the absence of an electric field, this equation, along with an equilibrium assumption, yields the standard Arrhenius form for the desorption rate. The validity of the equilibrium assumption is discussed in both the absence and the presence of an electric field. By numerically integrating the Langevin equation, we investigate the effects of the laser on specific model systems, and we find that in certain regimes the effect of the laser can be represented by an increased effective temperature of the heat bath. Nonthermal behavior on short time scales is discussed.Keywords
This publication has 19 references indexed in Scilit:
- The temporal behaviour of reflection-high-energy-electron-diffraction intensity and implications for growth kinetics during molecular beam epitaxial growth of GaAs/AlxGa1−xAs(100) modulated structuresSurface Science, 1986
- Kinetic processes in molecular beam epitaxy of GaAs(100) and AlAs(100) examined via static and dynamic behavior of reflection high-energy electron-diffraction intensitiesJournal of Vacuum Science & Technology A, 1986
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensityApplied Physics Letters, 1985
- Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high-energy electron diffraction intensity dynamics studyApplied Physics Letters, 1985
- Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensityJournal of Vacuum Science & Technology B, 1985
- Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulationsSurface Science, 1983
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Surface stoichiometry and structure of GaAsSurface Science, 1974