Novel Silicon-Carbon (Si:C) Schottky Barrier Enhancement Layer for Dark-Current Suppression in Ge-on-SOI MSM Photodetectors
- 9 July 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 29 (7) , 704-707
- https://doi.org/10.1109/led.2008.923540
Abstract
This letter reports the first demonstration of an evanescent coupled germanium-on-silicon-on-insulator (Ge-on-SOI) metal-semiconductor-metal (MSM) photodetector with a novel silicon-carbon (Si:C) Schottky barrier enhancement layer. Through the insertion of a Si:C barrier layer between the metal/Ge interface, the hole Schottky barrier height phibh can effectively be enhanced to ~0.52 eV above the valence band edge. As a result, significant dark-current IDark suppression by more than four orders of magnitude was demonstrated, leading to an impressive IDark of ~11.5 nA for an applied bias VA of 1.0 V. Optical measurements performed at a photon wavelength of 1550 nm revealed the achievement of good internal responsivity and quantum efficiency of ~530 mA/W and 42.4%, respectively, making such a high-performance Ge-on-SOI MSM photodetector a promising option for optical communication applications.Keywords
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