Effect of shroud flow on high quality InxGa1−xN deposition in a production scale multi-wafer-rotating-disc reactor
- 1 May 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5) , 749-753
- https://doi.org/10.1007/bf02666535
Abstract
No abstract availableKeywords
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