Growth of SiO2 Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2152
- https://doi.org/10.1143/jjap.27.l2152
Abstract
A new technology for low-temperature growth of high-quality silicon dioxide (SiO2) film on silicon has been developed. The technology is photo-CVD using 123.6 nm light of a Kr resonance lamp from Si2H6 and O2, in which only Si2H6 can be selectively excited but not O2. The amounts of Si-OH bondings in the SiO2 films deposited by the 123.6 nm light are much lower than those by the other VUV lamps. The interface state density of the Si-MOS diode is extremely low, and its minimum value is 2×1010 cm-2 eV-1 near the Si midgap for the SiO2 film deposited at a substrate temperature of 145°C.Keywords
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