Radiation Hardening of Thermal Oxides on Silicon by Displacement Damage
- 1 June 1972
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (6) , 2897-2899
- https://doi.org/10.1063/1.1661615
Abstract
High-energy implantation of various ions into thermal oxides on silicon renders these oxides less sensitive to charge buildup when subsequently exposed to ionizing radiation. The reduced sensitivity is primarily a reduction in bias dependence and is attributed to ion-induced displacement damage in the oxide.This publication has 8 references indexed in Scilit:
- Effect of ion-implantation into thermal SiO2-films on sodium ion driftRadiation Effects, 1971
- Low-Temperature Reduction of Fast Surface States Associated with Thermally Oxidized SiliconJournal of the Electrochemical Society, 1971
- Radiation Hardening of Thermal Oxides on Silicon via Ion ImplantationIEEE Transactions on Nuclear Science, 1969
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- Radiation Effects in Modified Oxide Insulators in MOS StructuresIEEE Transactions on Nuclear Science, 1968
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- Ideal MOS Curves for SiliconBell System Technical Journal, 1966
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965