Compound formation at the interaction of Pd with strained layers of Si1−xGex epitaxially grown on Si(100)
- 5 August 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6) , 665-667
- https://doi.org/10.1063/1.105358
Abstract
The interaction of thin Pd films deposited on strained layers of Si1−xGex epitaxially grown on Si(100) was studied. The Ge concentration in the molecular beam epitaxy grown Si1−xGex films was x=0.16, and their thickness 2300 Å. A highly textured ternary compound (Pd2Si1−yGey) formed concurrently with the PdGe phase, at annealing temperatures between 200 and 550 °C. Above 500 °C, a region of Si1−xGex alloy with high Ge concentration formed between the fully reacted compound and the unreacted Si1−xGex layer.Keywords
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