Electrical properties and photoluminescence studies of Ge-implanted GaAs
- 1 January 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (1) , 213-238
- https://doi.org/10.1007/bf02654910
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Formation of heavily doped n-type layers in GaAs by multiple ion implantationJournal of Electronic Materials, 1980
- Amphoteric behavior of Ge implants in GaAsApplied Physics Letters, 1979
- Diatomic-complex donor and acceptor model for Ge-doped vapor-grown GaAsJournal of Applied Physics, 1978
- Study of Encapsulants for Annealing GaAsJournal of the Electrochemical Society, 1977
- Vaporization of Ion-Implanted GaAsPublished by Springer Nature ,1973
- P-N Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAsJournal of Applied Physics, 1971
- Germanium-Doped Gallium ArsenideJournal of Applied Physics, 1970
- Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxyJournal of Physics and Chemistry of Solids, 1969
- Luminescence due to Ge Acceptors in GaAsJournal of Applied Physics, 1968
- Acceptor behaviour of germanium in gallium arsenideJournal of Physics and Chemistry of Solids, 1967