Transient enhanced diffusion of implanted boron in 4H-silicon carbide
- 13 March 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (11) , 1434-1436
- https://doi.org/10.1063/1.126055
Abstract
Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several μm into the samples when annealed at 1600 and 1700 °C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 °C is determined to 7×10−12 cm2/s, which is 160 times larger than the equilibrium B diffusivity given in the literature.Keywords
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