Retention testing of MNOS LSI memories
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (4) , 723-729
- https://doi.org/10.1109/jssc.1979.1051250
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A 4096-bit word-alterable ROMIEEE Transactions on Electron Devices, 1977
- MNOS LSI memory device data retention measurements and projectionsIEEE Transactions on Electron Devices, 1977
- Test results on an MNOS memory arrayIEEE Transactions on Electron Devices, 1977
- Discharge of MNOS structures at elevated temperaturesSolid-State Electronics, 1976
- Trap-assisted charge injection in MNOS structuresJournal of Applied Physics, 1973
- Discharge of MNOS structuresSolid-State Electronics, 1973
- MNOS memory transistors in simple memory arraysIEEE Journal of Solid-State Circuits, 1972