Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate
- 12 January 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (2) , 263-265
- https://doi.org/10.1063/1.1640467
Abstract
Single-stack InAsSb self-assembledquantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 μm up to 25 ° C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13% is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm 2 . With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm /° C is measured, which is even lower than that caused by the refractive index change.Keywords
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