AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission
- 27 October 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (17) , 3456-3458
- https://doi.org/10.1063/1.1623321
Abstract
We report on a deep UV light-emitting diode over sapphire substrate with AlGaN multiple-quantum-well active region. Pulsed atomic-layer epitaxy deposited low-defect AlN/AlGaN buffers and an optimized active layer design yielded a sharp quantum-well emission peak at 287 nm and very little long-wave secondary emission. For a 100 μm×100 μm unpackaged device, a power of 27 μW at 20 mA dc and a peak external quantum efficiency of 0.1% at 100 mA pulse pumping were measured. Flip-chip packaging should increase these numbers nearly by a factor of 3.Keywords
This publication has 10 references indexed in Scilit:
- 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN BaseJapanese Journal of Applied Physics, 2003
- Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nmApplied Physics Letters, 2003
- Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nmApplied Physics Letters, 2002
- Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nmApplied Physics Letters, 2002
- AlGaN single-quantum-well light-emitting diodes with emission at 285 nmApplied Physics Letters, 2002
- Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nmApplied Physics Letters, 2002
- Top-emission ultraviolet light-emitting diodes with peak emission at 280 nmApplied Physics Letters, 2002
- AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)Applied Physics Letters, 2002
- Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain managementApplied Physics Letters, 2002
- Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire SubstrateJapanese Journal of Applied Physics, 2002