Laser Doping and Crystallization of Amorphous Silicon Thin Films
- 1 January 1994
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Characterization of the Substrate Interface of Excimer Laser Crystallized Polycrystalline Silicon Thin FilmsMRS Proceedings, 1994
- An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabricationMicroelectronic Engineering, 1993
- Excimer-laser-annealed poly-Si thin-film transistorsIEEE Transactions on Electron Devices, 1993
- Laser Dehydrogenation of PECVD Amorphous SiliconMRS Proceedings, 1993
- On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser AnnealingJapanese Journal of Applied Physics, 1990
- Low temperature crystallization of amorphous silicon using an excimer laserJournal of Electronic Materials, 1990
- In-situ doping of silicon using the gas immersion laser doping (GILD) processApplied Surface Science, 1989
- High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon filmIEEE Transactions on Electron Devices, 1989
- Low Temperature Crystallization of Amorphous Silicon Films Using an Excimer LaserMRS Proceedings, 1989
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TftsMRS Proceedings, 1986