High energy P implants in silicon

This publication has 21 references indexed in Scilit:

• Channeling implantation of B and P in silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
• The EXTRION 220 parallel scan magnet
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
• Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealing
  Applied Physics A, 1989
• Damage formation and annealing of high energy ion implantation in Si
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
• Buried dopant and defect layers for device structures with high-energy ion implantation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
• Range distributions of MeV implants in silicon II
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Profile studies of MeV ions implanted into Si
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• MeV-energy B+, P+ and As+ ion implantation into Si
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• High energy implantation and annealing of phosphorus in silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Range distributions of MeV implants in silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985