Titanium silicide as a diffusion source for arsenic
- 1 June 1990
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (11) , 7174-7176
- https://doi.org/10.1063/1.344550
Abstract
The matter transport of arsenic ions implanted into titanium silicide layers has been investigated after thermal diffusion treatment in the 800 °C–1100 °C temperature range. The arsenic atoms redistribute between TiSi2 and Si with a segregation coefficient depending on temperature. The diffused amount increases linearly with the square root of annealing time at 1100 °C. The n‐doped shallow Si layer has a quite good electrical activity with a mean resistivity of about 1.2 MΩ cm. The leakage current of the reverse‐biased n+/p junction is instead quite high. Stacking faults are observed in the diffused layer.This publication has 10 references indexed in Scilit:
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