Voids in epitaxial silicon films grown under different thermal conditions: void detection by thermal helium desorption
- 1 April 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 241 (1-2) , 206-210
- https://doi.org/10.1016/0040-6090(94)90427-8
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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