Thin-film wafer fusion for buried-heterostructure InP-based lasers fabricated on a GaAs substrate

This publication has 34 references indexed in Scilit:

• Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion
  IEEE Journal of Quantum Electronics, 1998
• Characteristics of InAsP/InGaAsP edge emitting laserdiodes obtained by localisedfusion on GaAs substrates
  Electronics Letters, 1997
• Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients
  Applied Physics Letters, 1997
• Submilliamp 1.3 µm vertical-cavity surface-emittinglasers with threshold current density of < 500 A/cm ²
  Electronics Letters, 1997
• Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique
  Applied Physics Letters, 1997
• Bias-free 1 Gbit/s data transmission using singlemodeGaAs VCSELs at λ = 835 nm
  Electronics Letters, 1996
• Wafer bonding of 50-mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
  Applied Physics Letters, 1996
• 1.55 µm vertical-cavity surface-emitting laserswith wafer-fused InGaAsP/InP-GaAs/AlAs DBRs
  Electronics Letters, 1996
• Silicon heterointerface photodetector
  Applied Physics Letters, 1996
• Generalized formula for curvature radius and layer stresses caused by thermal strain in semiconductor multilayer structures
  Journal of Applied Physics, 1983