InAlAs/InP modulation doped heterostructures by atmospheric pressure metalorganic chemical vapor deposition using tertiarybutylphosphine

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Abstract
Undoped and modulation doped InAlAs/InP heterostructures with excellent optical and electrical characteristics are demonstrated using tertiarybutylphosphine (TBP). Low-temperature photoluminescence spectra showed the presence of a type II interface transition indicating the high quality of the interface. Two-dimensional electron gas transport in a modulation doped sample containing a sheet density of 1.8×1012 cm−2 was verified by observing plateaus in the quantum Hall effect. These results confirmed that TBP can be substituted for phosphine for the growth of high quality InAlAs/InP heterostructures.