Depth Profile Measurement of Activated Boron-Concentration in Diamond Thin Films Utilizing Schottky Diode C-V Curves

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Abstract
The depth profiles of activated boron concentration N B in the Al/p+-diamond Schottky diodes were systematically investigated from the junction capacitance-voltage (C-V) curves. The observed 1/C 2 vs V plot did not fall on straight lines, indicating a nonuniform depth profile of N B. Using these C-V curves, activated boron concentration N B profiles were obtained. From the outermost surface to 50∼300-nm-deep layers (depending upon the original doping amount), N B decreased by two∼three orders of magnitude from its original value. This kind of abrupt profile developed only in regions in contact with Al.