Direct Bonding between InP and Gd3Ga5O12 for Integrating Semiconductor and Magnetooptic Devices
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2R) , 510
- https://doi.org/10.1143/jjap.34.510
Abstract
The bonding of InP/Gd3Ga5O12 and InP/GaInSb on Gd3Ga5O12 without glue is demonstrated. After chemical treatment, heat treatment in H2 ambient results in bonding of the samples. We have investigated the bonding conditions, mechanisms and the bonding durability against device fabrication processes. The bonding durability depends on the crystal orientation of the wafer, the heat-treatment temperature and GaInSb layer thickness. The samples bonded at higher temperature maintained bonding after typical device fabrication processes. The (111)-oriented InP is more susceptible to bonding than the (100)-oriented InP. The heat-treatment temperature is reduced by using appropriate chemical treatment and by applying pressure.Keywords
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