Temperature behavior and annealing of insulated gate transistors subjected to localized lifetime control by proton implantation
- 28 February 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (2) , 185-188
- https://doi.org/10.1016/0038-1101(87)90147-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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