Degradation mechanism of flash EEPROM programming after program/erase cycles
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The mechanism of degradation of flash EEPROM cell characteristics caused by program operation with the channel hot electron injection after program/erase (P/E) cycles are investigated. To clarify the relation between the degradation and oxide damage such as interface-states and oxide charges, the charge-pumping (CP) technique, transconductance (G/sub m/) measurements and cell endurance measurements are performed. In the degradation, a reduction of electron injection into the floating gate and a reduction of the G/sub m/ should be considered separately. The reduction of electron injection into the floating gate is found to be caused mainly by the interface-states located in the drain overlap region, not by charges trapped in the oxide. These interface-states are created during the initial step of program operation. On the contrary, a reduction of G/sub m/ is caused mainly by interface-states located around the drain edge. These are created during the final step of program operation.<>Keywords
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