Physical background of substrate current characteristics and hot-carrier immunity in short-channel ultrathin-film MOSFET's/SIMOX
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (3) , 352-358
- https://doi.org/10.1109/16.275220
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Non-local impact ionization in silicon devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETSIEEE Electron Device Letters, 1991
- Analysis of short-channel effect in thin-film SOI MOS transistorElectronics and Communications in Japan (Part II: Electronics), 1991
- Enhanced reliability in Si MOSFETs with channel lengths under 0.2 micronSolid-State Electronics, 1990
- Single-transistor latch in SOI MOSFETsIEEE Electron Device Letters, 1988
- Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si MOSFET'sIEEE Electron Device Letters, 1988
- Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layersIEEE Electron Device Letters, 1988
- Hot-electron effects in Silicon-on-insulator n-channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Submicrometer MOSFET structure for minimizing hot-carrier generationIEEE Transactions on Electron Devices, 1982