Images of local tilted regions in strain-relaxed SiGe layers
- 15 December 1999
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 273-274, 608-611
- https://doi.org/10.1016/s0921-4526(99)00585-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFETIEEE Electron Device Letters, 1996
- Strain relaxation and dislocations in SiGe/Si structuresMaterials Science and Engineering: R: Reports, 1996
- Evolution of strain relaxation in step-graded SiGe/Si structuresApplied Physics Letters, 1995
- Competing relaxation mechanisms in strained layersPhysical Review Letters, 1994
- X-ray diffraction from low-dimensional structuresSemiconductor Science and Technology, 1993
- Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxationPhysical Review Letters, 1993
- Strain relaxation and mosaic structure in relaxed SiGe layersApplied Physics Letters, 1993
- Mechanism and conditions for anomalous strain relaxation in graded thin films and superlatticesJournal of Applied Physics, 1992
- UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applicationsProceedings of the IEEE, 1992
- Anomalous strain relaxation in SiGe thin films and superlatticesPhysical Review Letters, 1991