Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy
- 23 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (17) , 1756-1758
- https://doi.org/10.1063/1.102208
Abstract
Characterization of heteroepitaxial GaAs grown on silicon‐on‐sapphire that had been microstructurally upgraded by the double solid phase epitaxy process reveals that microtwining and surface roughness are substantially reduced. Moreover, the thermally induced elastic strain in the GaAs film is found to be reduced by over a factor of 4 from the strain measured in GaAs‐on‐Si (100) grown in the same manner. The low‐temperature photoluminescence characteristics are similar to GaAs homoepitaxial films grown by molecular beam epitaxy.Keywords
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