Steps and fine structure in the drain current of MISFETs after X-irradiation under bias
- 1 November 1975
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 8 (3) , 211-215
- https://doi.org/10.1007/bf00896613
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Peaked structure appearing in the field effect mobility of silicon MOS devices at liquid helium temperaturesJournal of Physics C: Solid State Physics, 1974
- Image force interactions at the interface between an insulator and a semiconductorJournal of Applied Physics, 1974
- Influence of X-irradiation on the solicon-silicon dioxide interface of MOS structuresApplied Physics A, 1974
- Peaked structure in field-effect mobility of silicon MOS transistors at very low temperaturesApplied Physics Letters, 1973
- The measurement of calibrated current-voltage characteristics up to the second derivativeJournal of Physics E: Scientific Instruments, 1973
- Effect of charge inhomogeneities on silicon surface mobilityJournal of Applied Physics, 1973
- Low energy electron irradiation of the Si-SiO2 interfaceThin Solid Films, 1972
- On the behaviour of currents going through MOS structures under ionizing radiationsSolid-State Electronics, 1971
- Model for Radiation-Induced Charge Trapping and Annealing in the Oxide Layer of MOS DevicesJournal of Applied Physics, 1969
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967