A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFT
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (3) , 133-135
- https://doi.org/10.1109/55.988815
Abstract
A novel process for fabricating self-aligned gate-overlapped LDD (SAGOLDD) poly-Si thin film transistors (TFTs) was demonstrated. Laser irradiation for dopant activation was performed from the backside of the quartz wafer. The graded LDD structure was naturally formed under the gate edges due to the lateral diffusion of the dopants during the laser activation. In comparison with the conventional laser-processed self-aligned poly-Si TFTs, the SAGOLDD poly-Si TFTs exhibited lower leakage current, suppressed kink effect, and higher reliability. Moreover, the proposed process was simple and very suitable for low-temperature processing.Keywords
This publication has 14 references indexed in Scilit:
- A novel self-aligned gate-overlapped LDD poly-Si TFT with high reliability and performancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Use of necked-down areas to control nucleation site and direction of solidification of polycrystalline silicon using excimer laser crystallizationJournal of Applied Physics, 2000
- Excimer Laser Crystallisation of Poly-Si TFTs for AMLCDsMRS Proceedings, 2000
- Numerical Analysis of the Electrical Characteristics of Gate Overlapped Lightly Doped Drain Polysilicon Thin Film TransistorsJapanese Journal of Applied Physics, 1999
- Investigation of Relationship between Hot Carrier Degradation and Kink Effect in Low Temperature Poly-Si TFTsSID Symposium Digest of Technical Papers, 1999
- Gate-overlapped lightly doped drain poly-Si thin-film transistors for large area-AMLCDIEEE Transactions on Electron Devices, 1998
- Analysis of Drain Field and Hot Carrier Stability of Poly-Si Thin Film TransistorsJapanese Journal of Applied Physics, 1998
- An excimer-laser-based nanosecond thermal diffusion technique for ultra-shallow pn junction fabricationMicroelectronic Engineering, 1993
- Characteristics of offset-structure polycrystalline-silicon thin-film transistorsIEEE Electron Device Letters, 1988
- Leakage current characteristics of offset-gate-structure polycrystalline-Silicon MOSFET'sIEEE Electron Device Letters, 1987