Effects of ambient conditions in thermal treatment for Ge(0 0 1) surfaces on Ge–MIS interface properties

This publication has 12 references indexed in Scilit:

• Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors
  Applied Physics Letters, 2005
• Electrical characterization of germanium p-channel MOSFETs
  IEEE Electron Device Letters, 2003
• Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
  IEEE Electron Device Letters, 2002
• Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference
  Thin Solid Films, 2000
• Electron-stimulated dissociation of ammonia adsorbed on Ge(100)
  Surface Science, 2000
• Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study
  Surface Science, 1995
• Electrical and microstructural characterisation of an ultrathin silicon interlayer used in a silicon dioxide/germanium-based MIS structure
  Electronics Letters, 1988
• Characterisation of n -channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidation
  Electronics Letters, 1987
• Rapid interface parameterization using a single MOS conductance curve
  Solid-State Electronics, 1983
• Frequency and Temperature Dependence of C-V Characteristics at Ge-SiO₂ Interface and BT Treatments
  Japanese Journal of Applied Physics, 1970