Extraction of the oxide charges at the silicon substrate interface in Silicon-On-Insulator MOSFET's

This publication has 14 references indexed in Scilit:

• Fully-depleted SOI CMOS for analog applications
  IEEE Transactions on Electron Devices, 1998
• Introduction to Silicon On Insulator materials and devices
  Microelectronic Engineering, 1997
• Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature
  Solid-State Electronics, 1997
• Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77 K
  Microelectronic Engineering, 1997
• Substrate influences on fully depleted enhancement mode SOI MOSFETs at room temperature and at 77 K
  Solid-State Electronics, 1997
• Subthreshold slope of long-channel, accumulation-mode p-channel SOI MOSFETs
  Solid-State Electronics, 1994
• A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. I. Capacitance and conductance techniques
  IEEE Transactions on Electron Devices, 1992
• A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. II. Transient capacitance technique
  IEEE Transactions on Electron Devices, 1992
• Model for the potential drop in the silicon substrate for thin-film SOI MOSFETs
  Electronics Letters, 1990
• Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
  IEEE Transactions on Electron Devices, 1983