Fermi Level Effects on Dislocation Formation in InAs1−xSbx Grown by MOCVD
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effects of impurities Si and Be on the creation of Ga vacancies and Ga interstitials in GaAs grown by molecular beam epitaxyApplied Physics Letters, 1991
- Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc-blende structureJournal of Applied Physics, 1990
- MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ⩾10μmSemiconductor Science and Technology, 1990
- The Preparation of InAsSb/InSb SLS and InSb Photodiodes by MOCVDMRS Proceedings, 1990
- Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVDJournal of Electronic Materials, 1989
- Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectorsIEEE Electron Device Letters, 1989
- Impurity effects on the generation, velocity, and immobilization of dislocations in GaAsJournal of Applied Physics, 1989
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- Fermi level dependent native defect formation: Consequences for metal–semiconductor and semiconductor–semiconductor interfacesJournal of Vacuum Science & Technology B, 1988
- Temperature dependence of intrinsic carrier concentration and density of states effective mass of heavy holes in InSbJournal of Physics and Chemistry of Solids, 1988