Low temperature InAlAs buffer layers using trimethylarsenic and arsine by metalorganic chemical vapor deposition

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Abstract
Low temperature (LT) InAlAs buffer layers grown lattice matched to InP substrates using a combination of trimethylarsenic and arsine were demonstrated. The LT InAlAs buffer layer showed excellent surface morphology with a maximum resistivity of 2×105 Ω cm at a growth temperature of 475 °C. Low temperature photoluminescence and Hall-effect measurements confirming the high quality of epitaxial layers grown on top of the LT InAlAs buffer layer. Electrochemical capacitance voltage measurements consistently confirmed the absence of conductive impurity spikes at the epitaxial/substrate interface.