Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD
- 1 January 2005
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 8 (2) , G57-G59
- https://doi.org/10.1149/1.1848293
Abstract
An InGaAsN single-layer quantum dot (QD) laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at room temperature. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures. © 2004 The Electrochemical Society. All rights reserved.Keywords
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