Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations
- 1 June 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (6L) , L806
- https://doi.org/10.1143/jjap.44.l806
Abstract
We investigate basal plane dislocations (BPDs) in thick 4H–SiC(0001) epilayers and the formation of stacking faults in the active region of pin diodes. Synchrotron reflection X-ray topography shows that epitaxial growth on (0001) is advantageous in preventing the propagation of BPDs from the substrate into the epilayer and obtaining a low BPD density in the epilayer compared with growth on (0001). The current stress test of 4H–SiC(0001) pin diodes demonstrates the suppressed formation of stacking faults.Keywords
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